Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium
Identifieur interne : 000181 ( Main/Exploration ); précédent : 000180; suivant : 000182Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium
Auteurs : RBID : ISTEX:12034_1994_Article_BF02757582.pdfEnglish descriptors
Abstract
Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.
DOI: 10.1007/BF02757582
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A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="f32d075476c5d660b664c2bf85240733033effb6"><titleInfo lang="eng"><title>Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium</title></titleInfo><name type="personal"><namePart type="given">Suma</namePart><namePart type="family">Gurumurthy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">K S R K</namePart><namePart type="family">Rao</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">A K</namePart><namePart type="family">Sreedhar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">H L</namePart><namePart type="family">Bhat</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">B</namePart><namePart type="family">Sundersheshu</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation><affiliation>Solid State Physics Laboratory, Lucknow Road, 110 054, Delhi, India</affiliation></name><name type="personal"><namePart type="given">R K</namePart><namePart type="family">Bagai</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation><affiliation>Solid State Physics Laboratory, Lucknow Road, 110 054, Delhi, India</affiliation></name><name type="personal"><namePart type="given">Vikram</namePart><namePart type="family">Kumar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation><affiliation>Solid State Physics Laboratory, Lucknow Road, 110 054, Delhi, India</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer India, New Delhi</publisher><dateValid encoding="w3cdtf">2007-11-17</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.</abstract><subject lang="eng"><genre>Keywords</genre><topic>Cadmium telluride</topic><topic>photoluminescence</topic><topic>annealing</topic><topic>stoichiometry</topic><topic>indium doping</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Bull. Mater. Sci.</title></titleInfo><titleInfo><title>Bulletin of Materials Science</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 17</partNumber><partNumber>Number: 6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-11-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Materials Science</topic><topic>Engineering, general</topic></subject><identifier type="issn">0250-4707</identifier><identifier type="issn">Electronic: 0973-7669</identifier><identifier type="matrixNumber">12034</identifier><identifier type="local">IssueArticleCount: 57</identifier><recordInfo><recordOrigin>Indian Academy of Sciences, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02757582</identifier><identifier type="matrixNumber">Art44</identifier><identifier type="local">BF02757582</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1057</start><end>1064</end></extent></part><recordInfo><recordOrigin>Indian Academy of Sciences, 1994</recordOrigin><recordIdentifier>12034_1994_Article_BF02757582.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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